Abstract
A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.
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