Abstract
In this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(μτ)e] was measured to be ∼4x10-3 cm2/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ∼2.8% (FWHM) at 662 keV.
Highlights
Detectors for hard X- and gamma-rays are needed for various applications, including nonproliferation and national security, astronomy, medical imaging and high energy physics
We report on the charge-transport properties of as-grown Cd0.9Zn0.1Te0.98Se0.02 grown by the Traveling Heater Method (THM)
We evaluated the charge-transport characteristics of as-grown detector grade Cd0.9Zn0.1Te0.98Se0.02 (CZTS) grown by THM technique
Summary
Detectors for hard X- and gamma-rays are needed for various applications, including nonproliferation and national security, astronomy, medical imaging and high energy physics. Due to its poor thermo-physical properties, the yield of largevolume high-quality detector-grade CZT continues to be an issue. The main issue[3] with CZT is the high segregation coefficient (∼1.35) of Zn, which causes a compositional variation along the length of the ingot and reduces the yield of high-quality material. The presence of a high concentration of sub-grain boundaries and their networks hinders the yield of high-quality large-volume detector-grade CZT material.[4,5] Selenium was found to be effective in modifying the Zn segregation coefficient to be close to unity. Due to the reduction in band-gap of CdTeSe (CTS) compound[9,10] with increasing Se component (up to ∼40% Se), growth of high-resistivity CTS crystals suitable for room-temperature radiation detectors is challenging.
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