Abstract
The current work was illustrated the impact of a thin film from Ni (II) Tetraphenylporphyrin (NiTPP) on the performance of the Au/n-Si Schottky. Structural and topographical properties of a NiTPP/n-Si thin film were examined using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The NiTPP/n-Si film was nanocrystalline, with an average crystallite size of approximately 33.87 nm and an average roughness of around 4.30 nm. The molecular structure and purity of NiTPP/n-Si were also confirmed using Raman spectra. Dark current-voltage (I-V) characteristics were used to determine and describe the diode parameters and conduction processes at forward bias as a function of temperature (300–390 K) for an Au/NiTPP/n-Si/Al diode. Photoresponse qualities of the diode were investigated under different illumination conditions. The reverse current of the diode grows as the light intensity increases. Impedance spectroscopy (IS) was performed at 0.025–1000 kHz. To assess the interface and recombination processes, the equivalent circuit model was thoroughly investigated. The findings demonstrate that the Au/NiTPP/n-Si/Al diode as a photodetector had significant potential for using in next-generation electrical devices.
Published Version
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