Abstract
Space-charge-limited Schottky diodes are fabricated by evaporation of gold on electrodeposited CdTe films. The charge transport mechanisms, in both polarities, are studied. Thermionic emission and space-charge-limited conduction theories can adequately describe the transport properties. The latter mechanism is controlled by a donor-type deep level whose ionization energy varies with the applied voltage according to the Poole-Frenkel effect. Bardeen's model in which the Fermi level is pinned to the interface states, can explain the voltage dependence of the barrier height in these devices. Some of the important parameters of CdTe films are measured from the characteristics of these diodes.
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