Abstract
We have calculated the electrical resistivity of several dilute aluminum based alloys for which experimental data exist on the deviation from Matthiessen's rule(DMR). We take account of the anisotropy in the ideal (pure metal) scattering and its modification on adding impurities. This is a major source of DMR. In addition, we compute the effect of inelastic impurity scattering, interference between impurity and ideal scattering, Debye–Waller factors, and also the effect of mass changes on the alloy resistivity. While some of these mechanisms for DMR can be of importance under specific conditions, they should be included only after the major effect of anisotropy in the ideal scattering has been properly treated.
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