Abstract
A theory for charge transport in dielectrics via tunneling between traps was developed. Unlike in the Frenkel model, in the present theory the traps are characterized with the thermal and optical ionization energies, and ionization proceeds by the multi-phonon mechanism. The theory predicts the tunneling between such traps to be a thermally stimulated process whose activation energy equals half to the difference between the optical and thermal ionization energies. The theory provides an adequate description to the experimental current-voltage characteristics of silicon-rich silicon nitride films. Such films have a high density of traps originating from the excess silicon present in the material, with charge transport proceeding as a charge carriers tunnel between closely spaced traps.
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