Abstract
The theory of charge transport in dielectrics by tunneling between traps is developed. In contrast to the Frenkel model, traps in silicon nitride are characterized by two energies, optical and thermal ones, and ionization occurs by the multiphonon mechanism. The theory predicts that tunneling between such traps is thermally stimulated: the half-difference of the optical and thermal energies plays the role of the activation energy. This theory successfully explains the experimental current-voltage characteristics of silicon-enriched silicon nitride. Such silicon nitride contains a large number of traps whose nature is associated with excess silicon. Charge transport in this material occurs by tunneling between adjacent traps.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
