Abstract
It is revealed that TlS single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T ≤ 230 K in a dc electric field and a nonactivated hopping conduction at low temperatures in strong electric fields. Estimates are made for the density of states near the Fermi level (NF = 2.8 × 1020 eV−1 cm−3 and their energy spread (ΔW = 0.02 eV), the localization radius (a = 33 A), the average jump distance in the region of activated (Rav(T) = 40 A) and nonactivated (Rav(F) = 78 A) hopping conduction, and also the drop in the charge carrier potential energy along the jump distance in an electric field F: eFR = 0.006 and 0.009 eV at F = 7.50 × 103 and 1.25 × 104 V/cm, respectively.
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