Abstract
The transfer of charge from under a gate of a three-phase surface-channel charge-coupled device is analysed in terms of thermal diffusion, charge-gradient induced drift, fringing field drift, and interface state trapping. A method based on a piecewise approximation for the emission rate from interface states is proposed and used to derive the single-transfer characteristics in the presence of interface traps. It is shown that the emission rate exhibits a marked spatial dependence, which is a function of both fringing field profile and interface state density. It is also concluded that trapping effects are a strong limitation on the transfer efficiencies attainable in surface-channel charge-coupled devices at low and moderate frequencies.
Published Version
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