Charge transfer in CdTe at 200 and 300 K

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Using a perfect single crystal sample of CdTe grown using PVT method, the electronic charge transfer in the II–VI compound semiconductor CdTe at 200 and 300 K has been evaluated using two different approaches: (1) by solving a quadratic equation involving the observed structure factors of h+ k+ l=4 n+2 type reflections; and (2) by a graphical approach in which the observed and calculated atomic form factors are extrapolated to sin θ/λ=0 , to determine the transferred charge. Precise X-ray structure factors collected using MoK α radiation have been used for the analysis. The results obtained are reasonable and clearly indicate the ionicity by which charge is transferred from Cd to Te in CdTe.