Abstract
Abstract Surface charge-transfer are calculated from surface core-level shifts determined by Eastman et al. and Taniguchi et al. by using soft X-ray photoemission spectroscopy. A simple electrostatic model which was first applied by Shevchik et al. to the analysis of bulk data is adapted for surfaces of compound semiconductors. The charge transferred from cations to anions is found to be the same in the bulk and at the (110) surfaces of GaP, GaAs, GaSb, and InSb.
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