Abstract
We have observed the minority-charge signal transferred by surface acoustic waves (SAW) on a monolithic MIS structure. In the Al/ZnO/SiO2/p-Si system, we have made new improvements on the configuration of input and output gates and the channel-stop bias ring along the transfer path, and on the method to prepare the deep-depletion mode by applying the pulse bias at the transfer channel. This type of charge-transfer device by SAW (monolithic SAW-CTD) seems to have some advantages compared with the separated-medium type so far examined.
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