Abstract
The properties of the charge fluctuation are investigated in the dp model with the repulsion U pd between holes on the nearest-neighbor Cu and O sites and the infinite on-site repulsion U d at the Cu site. We calculate the charge susceptibility χ c ( q, iω n) and the charge correlation function S c ( q) = TΣ ωn χ c ( q, iω n) . It is found that S c ( q) has a peak at the Γ point and a maximum in a ring around the Γ point. The former is due to Tχ c ( q, 0) . Its intensity is proportional to temperature T and strongly enhanced by U pd. The latter is due to TΣ ω n ≠ 0 χ c ( q, iω n) and shows a weak T and U pd dependence. The intensity of the diffuse X-ray scattering on taking the charge fluctuation into account is also calculated. The result is consistent with the experiments in La 2−δSr δCuO 4.
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