Abstract
The small-signal transient behavior of junction transistors may be considered to be dependent on two factors: the response to an instantaneously injected charge increment, and the relationship between excess minority-carrier charge and steady-state collector current. Simple approximations to the charge-step response waveform result in transfer functions which closely approximate that from the one-dimensional diffusion model. Certain types of experimentally observed nonideal behavior may be approximated by suitable choice of coefficients.
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