Charge-offset stability of single-electron devices based on single-layered Fe nanodot array

Takayuki Gyakushi,Shusaku Honjo,Atsushi Tsurumaki-Fukuchi,Yasuo Takahashi,Yuki Asai,Masashi Arita

doi:10.1063/5.0040241

Abstract

In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural network devices, quantum computing devices (charge sensing), and reservoir computing devices. Therefore, the charge-offset drift in metal-based SEDs needs to be suppressed. However, the charge-offset stability of metal-based SEDs has not been investigated in depth, except in the case of Al and Al2O3 SEDs. In this work, Fe-based SEDs formed by single-layer Fe nanodot arrays embedded in MgF2 were studied with regard to their charge-offset stability. Using devices that produce simple current oscillations, the charge-offset drift (ΔQ0) of Fe-based SEDs was evaluated by focusing on peak shifts of the simple current oscillation over time, despite the use of a multi-dot system. This drift (ΔQ0 ≈ 0.3e) was shown to be much lower than in SEDs with Al-dots and Al2O3 tunnel junctions. Notably, the charge-offset drift in the metal-based SEDs was suppressed using the Fe–MgF2 system. The excellent stability of these devices was attributed to the material properties of the Fe–MgF2 system. Finally, as the Fe nanodot array contained numerous dots, the effect of satellite dots acting as traps on the charge-offset instability was discussed. The findings of this study will be important in future applications of metal-based SEDs in new information processing devices.

Highlights

In recent years, unprecedented new information processing technologies using nanoscale electronic devices, such as neural networks,1 quantum computing,2 and reservoir computing,3 have attracted attention
The charge-offset drift in Fe–MgF2-based Single-electron devices (SEDs) was successfully evaluated, despite these devices being multi-dot SEDs. This was possible because some SEDs produced clear and simple current oscillations, expected to originate from a single dot,23 as confirmed by their temperature dependence
Using such devices allowed the charge-offset drift to be evaluated by focusing on the peak shift over time

Summary

Introduction

In recent years, unprecedented new information processing technologies using nanoscale electronic devices, such as neural networks, quantum computing, and reservoir computing, have attracted attention. Single-electron devices (SEDs) are among the promising devices with the potential to realize such technologies due to their high functionality and ultra-low power consumption.. Numerous SED fabrication methods have been developed to date, with devices based on Al dots and Al2O3 tunnel barriers having been well characterized.. Metal dots of a few nanometers in size enable SEDs to operate at high temperatures and are relatively easy to fabricate. Operational instability caused by charge noise has emerged as a notable limitation to the further development of SEDs. In particular, SEDs with a metal-based single-electron island are highly unstable.

Methods

Results

Conclusion