Abstract
Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( ≪ 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO2-based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.
Highlights
Single electron devices (SEDs) confine individual electrons through the classical electrostatic effect known as Coulomb Blockade
Given the above influence of two-level systems (TLSs) and the fact that the level of charge offset drift in metallic devices becomes more severe as the amount of amorphous insulating material increases, it is natural to study the role of TLSs in these amorphous insulators
We have reviewed the experimental results on the low-frequency stability of SEDs known as charge offset drift in three classes of devices
Summary
Single electron devices (SEDs) confine individual electrons through the classical electrostatic effect known as Coulomb Blockade. SED devices as qubits have been successfully implemented in many solid state environments including carbon nanotubes [17], GaAs [18,19,20], SiGe [21,22] and silicon [23,24] quantum dots, as well as single dopant devices [25,26]. Each of these applications would require the integration of many SEDs. For instance, a useful current standard would give at least 100 nA of current. We will conclude with a discussion of the prospects for SEDs in light of the nature of the charge offset instability
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