Abstract
The charge transport mechanism through atomic-layer-deposited erbium oxide thin films has been analyzed with current-voltage (I-V) measurements. At low electric field, i.e., below 3 MV/cm, the charge conduction through 10 nm thick Er2O3 films is dominated by Poole–Frenkel electron injection. However, Fowler–Nordheim tunneling of holes also occurs at higher electric fields through the oxide. Various electronic and material parameters such as the trap density, activation energy of the traps, and interface defect density are extracted from the I-V and parallel conductance (GP) measurements as a function of frequency.
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