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Abstract
Silicon n+-p diodes with special design of the implant — so called ``spaghetti diodes'' — were used to study the impact of implantation process on charge multiplication afterirradiations to extremely large 1 MeV neutron equivalent fluences ofreactor neutrons up to 1.6·1017 cm−2. Silicon remainsfunctional even at these unprecedented levels of irradiation. Above1015 cm−2 collected charge (Q) grows linearly with biasvoltage, with the Q−V slope exhibiting a power law dependence onfluence. Different implantation processes were implemented on samplesto study the impact of implantation on chargemultiplication. ``Spaghetti'' diodes of different thicknesses werealso compared to conventional strip and pad detectors in order todetermine the impact of different electric and weighting field on thecollected charge.
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