Charge collection degradation in relaxation semiconductor detectors fabricated from silicon

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Silicon detectors damaged by 1 MeV neutrons show relaxation behaviour and demonstrate reduced charge collection efficiency (cce). Both effects occur as a result of the presence of radiation-induced defects in the forbidden gap. These defects act as generation-recombination centres in the former case, and as trapping centres in the latter. In particular, the shallow acceptor situated at 170 meV and detected at high fluences is implicated in the degradation of cce and also in the increase in reverse leakage current. The cce has been measured in a silicon detector irradiated such that it just type inverts and it is demonstrated to have degraded only slightly but it improves with increased reverse bias.