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Abstract
Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelectronics. Herein, we investigate the influence of the intercalation of semiconducting n-type InSe vdW crystals with ferroelectric rubidium nitrate (RbNO3) on the transport of charge carriers along and across the layers. The apparent maxima in the temperature dependences of the Hall coefficient are explained in the framework of a model that predicts, along with three-dimensional carriers, the existence of two-dimensional ones contributing only to the conductivity along the layers. The revealed increase of the conductivity anisotropy and its activation variation with temperature, which is mainly due to a decrease of the conductivity across the layers, confirm a two-dimensionalization of electron gas in n-InSe after insertion of the ferroelectric. From the numerical analysis, we determined the densities of carriers of both types, concentrations of donors and acceptors, as well as the value of the interlayer barrier.
Highlights
Intercalation could be used as an effective method to introduce new functionalities or enhance the existing parameters of a promising class of semiconducting van der Waals (vdW) crystals known as metal monochalcogenides, such as InSe, GaSe, etc
In the pristine form, these crystals have recently emerged as an excellent material base for quantum science, and for a wide range of innovative technologies, including quantum metrology, high broadband photosensors, light-emitting diodes, resonant tunnelling transistors with multiple regions of negative differential conductance, and field-effect transistors (FETs) with high electron mobility exceeding that of silicon-based FETs [6,7,8,9,10,11,12,13,14,15,16]
We report on the influence of ferroelectric rubidium nitrate (RbNO3 ) intercalation on the electrical parameters of semiconducting n-type InSe vdW crystals and their anisotropy probed with direct current (d.c.) techniques
Summary
The rapid development in this field has renewed interest in intercalation, which is a powerful approach to engineer the properties of layered materials [4,5]. In the pristine form, these crystals have recently emerged as an excellent material base for quantum science, and for a wide range of innovative technologies, including quantum metrology, high broadband photosensors, light-emitting diodes, resonant tunnelling transistors with multiple regions of negative differential conductance, and field-effect transistors (FETs) with high electron mobility exceeding that of silicon-based FETs [6,7,8,9,10,11,12,13,14,15,16]
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