Abstract
The charge carrier transport and energetic disorder in OC1C10-PPV:PCBM blends with different fullerene concentrations are investigated. We demonstrate that the temperature-dependent current density versus voltage (J–V) characteristics of PCBM electron-only device and OC1C10-PPV hole-only device can be accurately described using our recently introduced improved mobility model. Furthermore, the $$J-V$$ characteristics of OC1C10-PPV:PCBM blends that were measured in electron-only and hole-only devices for different wt% of PCBM can also be accurately described by the improved mobility model. Additionally, we find that the width of the Gaussian density of states $$\sigma$$ and zero-field mobility of electron and hole in OC1C10-PPV:PCBM blends are the function of wt% PCBM. For electron-only devices based on OC1C10-PPV:PCBM blends, the electron mobility gradually increases with increase in the PCBM weight ratio, while the width of the Gaussian density of states $$\sigma$$ gradually decreases with increase in the PCBM weight ratio. Surprisingly, the hole mobility and the width of the Gaussian density of states $$\sigma$$ in hole-only devices based on OC1C10-PPV:PCBM blends show an identical behavior. These results provide information about the energetic disorder and a simplified modeling of the charge transport in disordered organic semiconductors.
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