Carrier Density Dependence of the Mobility in Disordered Organic Semiconductors with Gaussian Disorder

Abstract

In this paper, the charge transport properties and energetic disorder are studied for pristine Si-PCPDTBT, mono-PCBM, bis-PCBM, and their blends of Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM. We show that the current density versus voltage curves of electron-only devices for mono-PCBM, bis-PCBM, Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM, and hole-only devices for Si-PCPDTBT, Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM cannot be accurately described using a conventional mobility model within which the mobility depends only on the electric field, but that a fully consistent description of all curves can be obtained using the improved extended Gaussian disorder model (IEGDM). Within the IEGDM, the presence of energetic disorder is described by a Gaussian density of states, and the mobility depends on the electric field and carrier density. Furthermore, we found that the mobility increases as the width of the Gaussian density of states decreases for both electron-only and hole-only devices, and the mobility is closely related to the energetic disorder. We view this as an indication that the energetic disorder appears to govern the charge transport in disordered organic semiconductors.