Abstract
In this paper the voltage dependent occupation of states and their filling dynamics is investigated in two terminal device structures (Schottky barrier diode, p/n junction) by capacitance voltage (C-V) and deep level transient spectroscopy (DLTS) methods. Frequency scanned DLTS (FS-DLTS) was used, where the DLTS signal at a constant temperature is measured as a function of the repetition frequency of electrical pulses, f, with the emission voltage of the pulses, VR, as a parameter.
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