Abstract
Diodes consisting of a hole transporting layer containing tri-stilbeneamine as active medium and a hole blocking layer (an oxadiazole blend) sandwiched between indium-tinoxide and aluminium electrodes have been characterized via both their j(F) characteristics and the dependence of intensity, quantum efficiency, and spectrum of the electroluminescence on the thickness Le of the hole blocking layer. The results are discussed within the framework of the analytic model advanced in the preceding paper. Both the decrease of the effect of electric field screening at the anode due to the space charge accumulation at the internal interface as well as the recombination efficiency with decreasing Le is in good agreement with theory.
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