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https://doi.org/10.1016/0022-3093(89)90101-4
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Cite Journal: Journal of Non-Crystalline Solids |  Publication Date: Dec 1, 1989 |
 Citations: 2 |
During the film growth of a-Si:H the transient photoconductivity was monitored with a contactless microwave technique. Effects of defects and of space charge regions due to i-n-i interfaces were observed and briefly discussed.
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