Abstract
Charge carrier hopping transport is generally taken from Miller-Abrahams and Marcus transition rates. Based on the Miller-Abrahams theory and nearest-neighbour range hopping theory, Apsley and Hughes developed a concise calculation method (A-H method) to study the hopping conduction in disordered systems. Here, we improve the A-H method to investigate the charge carrier hopping transport by introducing polaron effect and electric field based on Marcus theory and variable-range hopping theory. This improved method can well describe the contribution of polaron effect, energetic disorder, carrier density, and electric field to the charge carrier transport in disordered organic semiconductor. In addition, the calculated results clearly show that the charge carrier mobility represents different polaron effect dependence with the polaron activation energy and decreases with increasing electric field strength for large fields.
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