Abstract
The design and performance of linear modulation techniques and RF power amplifiers are discussed. Various types of power amplifier are used in the comparison, using simulation, of out-of-band radiation and power efficiency. The designs focus on high-frequency silicon bipolar power amplifiers suitable for low-power portable radio applications. Two different 4-QAM (4-level quadrature amplitude modulation) schemes are compared. Power efficiency as high as 40% can be achieved using a dynamically biased amplifier operating near saturation. The effects of nonlinear distortions from power amplifiers on adjacent channel interference as well as bit and block error rate performance are also investigated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
