Abstract
There are many methods describing defects induced by ion implantation, but none are capable of describing it quantitatively. In order to solve this problem, we studied the magnetic change of silicon carbide (SiC) after ion implantation, and found that even if the implantation intensity and defects were increased, we found that all samples have the same paramagnetic background. In this paper, we use the paramagnetic characteristics shown by part of the defects to characterize the degree of defects. We studied how to characterize the concentration of the defect, using the Brillouin function to fit the data, validated the experimental results and analyzed the relationship between paramagnetic center concentration and defects.
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