Characterization Thin Film Nano Particle of Aluminum Tin Oxide (AlTO) as Touch Screen

Abstract

The aims of this research are to synthesis Aluminum Tin Oxide (AlTO) thin films have been deposited on glass substrates. The Tin (II) chloride dihydrate as precursor, ethanol as solvent, and AlCl3 as dopant substance, the film was done by spin coating technique. Then to characterization the properties of the thin film as the Structural and morphological analysis was carried out by X-Ray Diffraction (XRD) measurement and Scanning Electron Microscope (SEM). The Optical characteristics were analyzed from the study of transmission and absorption spectrum data obtained by UV-Vis Spectrophotometer. The Result from XRD measurement, there were crystal system alterations. They were confirmed that SnO2 and SnO2 doped Aluminum have cubic structure (by material phase classification of Al2O4Sn) because of the substrate compositions contained Aluminum. The XRD pattern shows that grain size of thin film decreased just after the Aluminum dopant was added. EDX analysis confirms the presence of SnO2. The Optical characteristics were analyzed from the study of transmission and absorption spectrum data obtained by UV-Vis Spectrophotometer. The Aluminum was added by various concentrations (5, 10, and 15)%. Transmissions of visible light were better on the little concentrations of Al, but absorptions were lower too. The range of band gap energy value (3.52 – 3.47) eV was decreased by increasing the Aluminum concentration. It show that semiconductor range used touch Screen.