Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process

Ming-Dou Ker Ming-Dou Ker,Woei-Lin Wu Woei-Lin Wu,Chyh-Yih Chang Chyh-Yih Chang

doi:10.1109/icmts.2004.1309292

Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process

Ming-Dou Ker Ming-Dou Ker, Woei-Lin Wu Woei-Lin Wu + Show 1 more

https://doi.org/10.1109/icmts.2004.1309292

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Publication Date: Mar 22, 2004

Citations: 1

Affiliation: National Yang Ming Chiao Tung University, Industrial Technology Research Institute

#Electrostatic Discharge Devices #Electrostatic Discharge + Show 8 more

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Abstract

Different electrostatic discharge (ESD) devices in a 0.35-/spl mu/m silicon germanium (SiGe) RF BiCMOS process are characterized in detail by a transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and the silicon-germanium heterojunction bipolar transistors (HBTs) with different layout parameters have been fabricated to investigate their ESD robustness. The human-body-model (HBM) ESD robustness of SiGe HBTs with the optional low-voltage (LV), high-voltage (HV), and high-speed (HS) implantations has been measured and compared in the experimental test chips.

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