Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S Voldman,J Schmidt,P Juliano,B Meyerson,D Harame,C Brennan,J Dunn,A Joseph,R Johnson,L Lanzerotti,E Rosenbaum

doi:10.1109/eosesd.2000.890052

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S Voldman, J Schmidt + Show 9 more

https://doi.org/10.1109/eosesd.2000.890052

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Publication Date: Sep 26, 2000

Citations: 31

Affiliation: IBM (United States), University of Illinois Urbana-Champaign, IBM Research - Thomas J. Watson Research Center

#Electrostatic Discharge #Heterojunction Bipolar Transistors + Show 8 more

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Abstract

This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

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