Abstract
We have studied photoluminescence spectra in the band-edge emission region of very high quality undoped ZnO, as a function of both (i) sample growth methods and conditions, and (ii) measurement temperatures. As a result, we have classified the defect types responsible for emission peaks observed in the band-edge emission region into three groups. In addition, probable lattice defects responsible for some of the emission peaks are suggested to be (i) oxygen vacancies and/or interstitial zinc, and (ii) residual aluminum impurities. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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