Abstract
Precipitates enriched by ytterbium and arsenic were found in the Ga0.65In0.35As crystal doped with 1 at% Yb grown by a synthesis-solute diffusion technique. Typical precipitates were characterized using an electron probe microanalyser. Composition of the dominant type was estimated to be close to Yb2As3. Some indications that a compound of such composition may exist are discussed.
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