Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique

Abstract

Abstract The jet nebulizer sprayed tungsten doped molybdenum trioxide (WMoO3) thin films and its P-N junction diode parameters have been studied for different doping concentrations (0, 3, 6 and 9 wt.%) of tungsten (W). The prepared films were studied by XRD, SEM, EDX, UV and I-V. The structural analyses of XRD and SEM revealed that the WMoO3 films depicted the orthorhombic structure in polycrystalline nature and showed the sub-microsized plate and flake-like structures on the surface. The presence of the elements such as W, Mo and O in the WMoO3 films prepared by jet nebulizer spray (JNS) pyrolysis technique was confirmed by the EDX spectra. From UV-vis analysis, the absorbance decreases up to 3 wt.% of WMoO3 then increases. 3 wt.% WMoO3 film exhibited the minimum band gap energy. The electrical property from I-V represents that the maximum average conductivity obtained as 5.70169×10−12 S/cm for 3 wt.% WMoO3 film. From the I-V measurements in darkness and under the illumination, the different diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs) of n-WMoO3/p-Si were examined using J-V, Cheung’s and Norde methods.