Impact of Cu concentration on the properties of spray coated Cu-MoO3 thin films: evaluation of n-CuMoO3/p-Si junction diodes by J-V, Norde and Cheung’s methods

Abstract

We reported that sub-microsized rod-like Cu doped MoO3 thin films were prepared by jet nebulizer spray (JNS) pyrolysis technique at an optimized substrate temperature of 500 °C. The prepared Cu-MoO3 films were characterized by XRD, SEM, EDX, UV–vis and I-V characteristics. The single phase orthorhombic crystal structure of MoO3 was observed by XRD pattern. SEM results showed that the sub-microsized rod-like structure was obtained by adding Cu concentration. The expected elements of Mo, Cu and O were confirmed using EDX spectrum. From UV–vis and I-V characteristics, the 6% of Cu doped MoO3 film revealed minimum band gap energy and maximum conductivity. All the n-CuMoO3/p-Si junction diodes exhibited the high photo-conducting nature. The significant diode parameters such as ideality factor (n), barrier height (Φb) and sheet resistance (Rs) were investigated along with Norde and Cheung’s methods for different doping concentrations (0, 3, 6 and 9 wt%) of Cu in darkness and under illumination.