Characterization of W1Cx electrical contacts on silicon carbide using RBS and AFM/SEM

Abstract

In this work we are investigating the structural evolution of tungsten carbide films deposited on silicon carbide (SiC) substrates as a function of temperature. We used thermal evaporation and tungsten carbide (WC) powder as a starting material to produce the thin layer deposition on semi-insulating silicon carbide (6H). Our intended applications are for devices working at 800°C; therefore, our investigations are carried out at 1h intervals of time the samples spent at this temperature. We used Rutherford backscattering spectrometry (RBS) for measuring the stoichiometry and depth profile, atomic force microscopy (AFM) and scanning electron microscopy (SEM) to monitor the surface morphology change, and optical measurements (Raman and optical absorption spectroscopy) to monitor the eventual apparition and evolution of chemically-induced defects of the SiC crystalline lattice.