Abstract
We have studied the bias stress and environment stability effects of transparent bottom-gate, bottom contact spin-coated zinc–tin oxide (ZTO) thin-film transistors (TFT). Various ratios of zinc to tin (Zn:Sn= 2:1, 1:1, and 1:2) were used for TFT fabrication. The linear mobilities of the TFTs with Zn:Sn= 2:1, 1:1, and 1:2 are 2.27, 6.77, and 0.44 cm2 V-1 s-1 respectively. The on/off drain current ratio is 108 for Zn:Sn= 2:1. However, the off-current increases by more than 5 orders in 7 days, which appears to be due to the adsorption of oxygen and water molecules. The TFTs are stable under negative bias stress for more than 10,000 s, but they show a large threshold shift under positive bias stress.
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