Abstract
Two-photon absorption of CsLiB6O10 (CLBO) related to the enhanced bulk damage resistance was investigated by using transmittance measurements. Pulsed laser beams at wavelengths of 532 and 266 nm were irradiated to CLBO crystals having several bulk damage resistances while the pulsed laser energy is varied from low enough to be negligible nonlinear absorption up to just below the laser-induced damage threshold. At a wavelength of 532 nm, the nonlinear absorption did not occur even at the laser fluence just below the damage threshold. In contrast, two-photon absorption depending on the bulk damage resistance was clearly observed at a wavelength of 266 nm. A high-quality CLBO having a high-damage resistance shows a 2 times lower two-photon absorption coefficient than that of a conventional CLBO.
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