Characterization of Traps in the Transition Region at the HfO2 ∕ SiOx Interface by Thermally Stimulated Currents

Abstract

Thermally stimulated currents (TSCs) have been measured to investigate electron traps in prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and interlayer by transmission electron microscopy (TEM). A second domain was found between and constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.