Abstract
Abstract Tin (Sn) films were electrodeposited by galvanostatic method from ethaline deep eutectic solvent (DES), without any additives. The effect of various deposition parameters on the microstructure was studied. With increase in metal salt concentration from 0.01 to 0.1 M, changes in current–potential behaviour were observed in the polarization scans. This might be due to the existence of [SnCl 3 ] − , [Sn 2 Cl 5 ] − complexes in ethaline DES. Smooth and homogeneous deposits were obtained on a steel substrate surface by applying current density of 1.57 × 10 −3 A/cm 2 at 25 °C. Under these conditions the deposition rate was found to be 0.1 ± 10% μm/min and current efficiency was obtained as 84 ± 3%. XRD analysis of the deposit confirmed the polycrystalline tetragonal structure with mostly (2 0 0) orientation having a crystallite size about 62 ± 16% nm along with an internal strain of 0.0031 ± 22%. The present deposition method is simple, economical and can be adapted for industrial applications.
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