Abstract
Diffusion from ultrathin (10 nm) strained GaAs/In0.2Ga0.8As/GaAs single quantum wells (SQWs) subjected to rapid thermal annealing up to 1050 °C was followed using luminescence and Rutherford backscattering spectroscopy (RBS) in combination with channeling. The SQW shapes (In profiles) determined with the help of RBS have been compared with those predicted from optical measurements. A satisfactory agreement between diffusion length of In at 1050 °C, evaluated using both experimental methods, has been obtained. Angular scans across the 〈110〉 axial channel in the (100) plane were applied to study the strain relaxation in SQWs. No signs of generation or misfit dislocation were found, confirming that the strain relaxes solely via intermixing.
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