Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model

Abstract

This paper deals with the photothermal interaction of an isotropic, homogenous, semiconducting, viscothermoelastic solid cylinder in the context of Lord-Shulman's of generalized thermoelasticity theory. The cylinder rotates around its axis with constant angular velocity. The bounding surface of the cylinder has been thermally shocked. The governing equations have been constructed in the Laplace transform domain and numerically calculated inversions of Laplace using the Tzou method. The numerical results for the carrier density increment, temperatures increment, strain, stress, and stress-strain energy have been represented graphically with various values mechanical relaxation time, angular velocity parameter, and lifetime parameter of a photogenerated carrier. The mechanical relaxation time and angular velocity of the rotation parameter have minimal effects on the carrier density function and temperature increment, while its effects on the strain, stress, and stress-strain energy are significant. The photogenerated carrier's lifespan parameter has essential implications on all functions studied.