Abstract
It is well known that irradiation with a highly focussed electron beam can directly produce holes and lines with nanometre dimensions, in certain inorganic films. The suitability of some inorganic materials as resists is discussed with particular attention given to factors governing the resolution and the required exposure conditions. The requirements placed on the lithographic apparatus for working with these inorganic resists are discussed. Results are presented on the lithographic properties of aluminum fluoride, vacuum deposited on bulk silicon and thin carbon substrates; the direct production of lines with width ∼nm and width to height ratios of order 1:10 is observed in aluminum fluoride on bulk silicon.
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