Abstract
Single-crystal silicon microstructures, of identical design, exhibit different failure rates (following fabrication or mechanical shock testing) due to various processes. The microstructures fabricated with a boron diffusion and subsequent removal of the boron-diffused layer have a higher survival rate to the fabrication process and to mechanical shock. The survival rate (a survivor has an intact proof mass and beam) through the process is increased by 26.5%. At a 3680 g shock, the boron-diffused devices have a 2.3% lower failure rate but the difference is not statistically significant. These results have been developed with wafer-level shock testing, which permits bulk testing of many samples in a cost-effective manner.
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