Abstract
The grain-boundary free (100) Si thin films grown by single scan of the cw-laser lateral crystallization (CLC) were investigated. Angular distribution of the sub-boundary length $N(\theta)$ in the grain-boundary free (100) area of a $74\times 83\mu \mathrm{m}^{2}$ was given by $N(\theta) =N_{0}\exp(-\theta /a)$, where $\theta$ was the rotation angle of the sub-boundary, $N_{0}$ was 3 mm/°, and a was 2.75° Moreover, sub-boundary free segments $(\gt \sim 30 \times 80 \mu \mathrm{m}^{2})$ were also observed. These features suggest that the sub-boundaries affect little on TFT characteristics.
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