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Abstract
The feasibility of split C– V measurements is successfully demonstrated on sub-0.1 μm Si MOSFETs. A novel improved methodology to extract accurately the effective channel length and the effective mobility is thus proposed. Unlike conventional I d( V g) based extraction techniques, this new approach does not assume the invariance of the effective mobility with gate length. The method is successfully applied to advanced Si and SiGe PMOSFETs down to 50 nm.
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