Abstract
Novel strained Si structures, such as Si/SiGe, are being evaluated for the next generation of high carrier mobility devices. Innovative metrology applications are required to assist the semiconductor industry in development and process monitoring as these technologies are evaluated. Crucial factors such as layer intermixing, stoichiometry, contamination and strain inhomogeneities must be accurately and reliably monitored. This paper focuses on the characterization by SIMS and Raman spectroscopy to meet the metrological requirements of strained Si on relaxed SiGe buffer structures. The latest benchmarks for SIMS depth resolution and quantification accuracy are discussed along with Raman characterization of lateral strain variations.
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