Abstract
We use several characterization techniques including Raman spectroscopy, pulsed metal-oxide-semiconductor (MOS) capacitor capacitance-time, and gate oxide integrity measurements to characterize strained silicon/relaxed SiGe/graded SiGe/Si samples. The effective generation lifetime depends on the defect density in the various layers varying from 10-4 s near the surface to 10-7 s in the graded and highly defective SiGe. GOI statistical analysis shows worsening oxide breakdown as the Ge concentration in the SiGe increases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
