Characterization of sputtered tungsten nitride film and its application to Cu electroless plating

Abstract

In this study, W and tungsten nitride films were fabricated by reactive sputtering in a N 2/Ar atmosphere, the native oxide growth on the surface of the tungsten nitride films was investigated by X-ray photoelectron spectroscopy (XPS). It was found that tungsten nitride films were the mixture of W and W 2N sputtered in atmospheres of 3 mTorr argon and at the N 2 partial pressure from 0.1 to 2.0 mTorr. The ratio of W and W 2N in films was changed with the nitrogen partial pressure in sputtered chamber. Surface oxidations of the W film and tungsten nitride films advanced with time. Electrochemical measurement shows that all reduction–oxidation (redox) potentials of tungsten and tungsten nitrides were lower than that of copper film in electroless copper solution. And so, electroless-plated copper could be deposited on the surface of tungsten nitride films when the substrates were immersed into electroless copper plating solution without any pretreatment. Tungsten nitride films are appropriate for ULSI Cu interconnections using electroless Cu deposition.