Abstract
The structure of small area (∼10 micron diameter) spots produced by Q-switched pulsed laser irradiation of n-type silicon covered by a thin film of sputtered aluminum have been studied. Spatially resolved SIMS analysis has been combined with SEM observations to characterize the resulting microstructure. Careful analysis of the SIMS results indicate the spots display subsurface alloying and deep (∼1 μm) aluminum penetration.
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